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| TIP42/42A/42B/42C PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 3 Features: * Medium Power Linear Switching Applications * Complement to TIP41/41A/41B/41C 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg TIP42 -40 -40 TIP42A -60 -60 -5 -6 2 150 -55to+150 TIP42B -80 -80 TIP42C -100 -100 Units V V V A W ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage TIP42 TIP42A TIP42B TIP42C Collector-emitter breakdown voltage TIP42 TIP42A TIP42B TIP42C Emitter-base breakdown voltage Collector cut-off current TIP42 TIP42A TIP42B TIP42C Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency * Symbol Test conditions MI N -40 -60 -80 -100 -40 -60 -80 -100 -5 MAX UNIT V(BR)CBO IC= -1mA, IE=0 V V(BR)CEO* IC= -30mA, IB=0 V V(BR)EBO IE= -1mA, IC=0 VCB=-40V, IE=0 VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE= -30V, IB= 0 VCE= -60V, IB= 0 VEB=-5V, IC=0 VCE=-4V, IC=-0.3A VCE=-4 V, IC= -3A IC=-6A, IB=-0.6A VCE=-4V, IC=-6A VCE=-10V,IC=-0.5 V ICBO -0.4 mA TIP42/42A TIP42B/42C ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT -0.7 -1 30 15 75 -1.5 -2 3 mA mA V V MHZ Pulse test WEITRON http://www.weitron.com.tw 1/3 17-Nov-08 TIP42/42A/42B/42C Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 17-Nov-08 TIP42/42A/42B/42C TO-220 Outline Dimensions unit:mm D F O C1 A H E1 E B1 B L1 A1 G G1 C Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 O TO-220 Min Max 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 L WEITRON http://www.weitron.com.tw 3/3 17-Nov-08 |
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